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IRF7410PBF PDF预览

IRF7410PBF

更新时间: 2024-11-06 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 153K
描述
HEXFET㈢Power MOSFET

IRF7410PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.09
其他特性:ULTRA LOW RESISTANCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:12 V最大漏极电流 (Abs) (ID):16 A
最大漏极电流 (ID):16 A最大漏源导通电阻:0.007 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2.5 W
最大脉冲漏极电流 (IDM):65 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7410PBF 数据手册

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PD - 96028A  
IRF7410PbF  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l P-Channel MOSFET  
l Surface Mount  
l Available in Tape & Reel  
l Lead-Free  
VDSS  
-12V  
RDS(on) max  
7m@VGS = -4.5V  
9m@VGS = -2.5V  
ID  
-16A  
-13.6A  
13m@VGS = -1.8V -11.5A  
Description  
These P-Channel HEXFET® Power MOSFETs from  
International Rectifier utilize advanced processing  
techniquestoachievetheextremelylowon-resistance  
per silicon area. This benefit provides the designer  
with an extremely efficient device for use in battery  
and load management applications..  
A
1
2
3
4
8
D
S
S
7
D
6
S
G
D
5
D
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
powerapplications. Withtheseimprovements,multiple  
devicescanbeusedinanapplicationwithdramatically  
reduced board space. The package is designed for  
vapor phase, infrared, or wave soldering techniques.  
SO-8  
Top View  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain- Source Voltage  
-12  
V
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
-16  
-13  
A
-65  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation ƒ  
Power Dissipation ƒ  
2.5  
W
1.6  
Linear Derating Factor  
20  
mW/°C  
VGS  
Gate-to-Source Voltage  
±8  
V
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to +150  
°C  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientƒ  
Max.  
50  
Units  
°C/W  
RθJA  
www.irf.com  
1
8/25/06  

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型号 品牌 替代类型 描述 数据表
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