Datasheet > IRF730

IRF730

更新时间： 2024-09-14 22:31:35

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	57K
描述
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

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IRF730 数据手册

IRF730

Data Sheet

July 1999

File Number 1580.5

5.5A, 400V, 1.000 Ohm, N-Channel Power

MOSFET

Features

• 5.5A, 400V

This is an N-Channel enhancement mode silicon gate power

ﬁeld effect transistor. It is an advanced power MOSFET

designed, tested, and guaranteed to withstand a speciﬁed

level of energy in the breakdown avalanche mode of

operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. These types can be operated directly

from integrated circuits.

• r

= 1.000Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17414.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRF730

TO-220AB

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-232

12 3 4 5 6 7

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IRF730 替代型号

型号	品牌	替代类型	描述	数据表
STP7NB40	STMICROELECTRONICS	功能相似	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
BUZ60	INFINEON	功能相似	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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IRF7301PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7301TR	UMW	获取价格	种类:N+N-Channel;漏源电压（Vdss）:20V;持续漏极电流（Id）（在25°
IRF7301TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Met
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