Datasheet > IRF730

IRF730

更新时间： 2024-09-15 05:39:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管场效应晶体管
页数	文件大小	规格书
1页	115K
描述
N-channel mosfet transistor

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中文翻译

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数据手册

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IRF730 数据手册

MOSFET

INCHANGE

IRF730

N-channel mosfet transistor

Features

·With TO-220 package

·Simple drive requirements

·Fast switching

1 2 3

·V_DSS=400V; R_DS(ON)≤1.0Ω;I_D=5.5A

·1.gate 2.drain 3.source

Absolute Maximum Ratings Tc=25℃

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

Drain-source voltage (V_GS=0)

Gate-source voltage

RATING

400

UNIT

±20

5.5

Drain Current-continuous@ T_C=25℃

Total Dissipation@T_C=25℃

Max. Operating Junction temperature

Storage temperature

P_tot

T_j

150

℃

T_stg

-65~150

TO-220

Electrical Characteristics Tc=25℃

SYMBOL

PARAMETER

CONDITIONS

MIN

400

MAX

UNIT

V_(BR)DSSDrain-source breakdown voltage

V_GS(TH)Gate threshold voltage

V_GS=0; I_D=0.25mA

V_DS= V_GS; I_D=0.25mA

1.0

±100

R_DS(ON)Drain-source on-stage resistance V_GS=10V; I_D=3.3A

V_GS=±20V;V_DS=0

V_DS=400V; V_GS=0

I_F=5.5A; V_GS=0

I_GSS

I_DSS

V_SD

Gate source leakage current

Zero gate voltage drain current

Diode forward voltage

1.6

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