IRF7105QPBF

更新时间： 2024-10-30 03:04:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数	文件大小	规格书
10页	320K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF7105QPBF 数据手册

PD - 96102

IRF7105QPbF

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

Dual N and P Channel MOSFET

SurfaceMount

Available in Tape & Reel

150°COperatingTemperature

Automotive [Q101] Qualified

Lead-Free

N-CHANNEL MOSFET

N-Ch P-Ch

V_DSS

25V

-25V

R_DS(on)0.10Ω 0.25Ω

P-CHANNEL MOSFET

Top View

I_D

3.5A

-2.3A

Description

Specifically designed for Automotive applications, these

HEXFET^®Power MOSFET's in a Dual SO-8 package utilize

the lastest processing techniques to achieve extremely low

on-resistance per silicon area. Additional features of these

Automotive qualified HEXFET Power MOSFET's are a

150°C junction operating temperature, fast switching

speed and improved repetitive avalanche rating. These

benefits combine to make this design an extremely efficient

and reliable device for use in Automotive applications and

a wide variety of other applications.

SO-8

The efficient SO-8 package provides enhanced thermal

characteristics and dual MOSFET die capability making it

ideal in a variety of power applications. This dual, surface

mount SO-8 can dramatically reduce board space and is

also available in Tape & Reel.

Absolute Maximum Ratings

Max.

Parameter

Units

N-Channel

P-Channel

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS

Pulsed Drain Current

3.5

-2.3

10V

2.8-1.8

-10

P_D@T_C= 25°C

Power Dissipation

2.0

0.016

± 20

W/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery dv/dt

3.0

-3.0

V/nS

°C

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance Ratings

Parameter

Min.

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

62.5

°C/W

www.irf.com

07/23/07

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRF7105QPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF7105QPBF_10	INFINEON	获取价格	HEXFETPOWERMOSFET
IRF7105QTRPBF	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel and P-Channel, Metal-oxide Semiconductor FET,
IRF7105TR	INFINEON	获取价格	暂无描述
IRF7105TR	UMW	获取价格	种类:N+P-Channel;漏源电压（Vdss）:N: 25V ;P：-25V;持续漏极
IRF7105TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel,
IRF7105TRPBF-1	INFINEON	获取价格	Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel,
IRF7106	INFINEON	获取价格	Power MOSFET(Vdss=+-20V)
IRF7107	INFINEON	获取价格	HEXFET Power MOSFET
IRF710-713	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 2.25A, 350-400V
IRF710A	FAIRCHILD	获取价格	Advanced Power MOSFET (400V, 3.6ohm, 2A)