Datasheet > IRF7105PBF-1

IRF7105PBF-1

更新时间： 2024-10-30 14:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		脉冲光电二极管晶体管
页数	文件大小	规格书
10页	616K
描述
Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

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IRF7105PBF-1 数据手册

IRF7105PbF-1

HEXFET^®Power MOSFET

N-CHANNEL MOSFET

N-CH P-CH

V_DS

0.1

9.4

3.5

-25

0.25

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

I_D

P-CHANNEL MOSFET

SO-8

-2.3

Top View

(@T_A= 25°C)

Features

Benefits

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

4000

IRF7105PbF-1

IRF7105TRPbF-1

IRF7105PbF-1

SO-8

Absolute Maximum Ratings

Max.

Parameter

Units

N-Channel

P-Channel

-2.3

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

3.5

2.8

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-1.8

-10

P_D@T_C= 25°C

Power Dissipation

2.0

0.016

± 20

W/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

3.0

-3.0

V/nS

°C

T_J,T_STG

-55 to + 150

Thermal Resistance Ratings

Parameter

Min.

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

62.5

°C/W

November 14, 2013

12 3 4 5 6 7...10

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