IRF644NPBF

更新时间： 2024-11-01 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	171K
描述
Power MOSFET

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中文翻译

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数据手册

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IRF644NPBF 数据手册

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Advanced Process Technology

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

• Fast Switching

250 V

Available

R_DS(on)(Ω)

Q_g(Max.) (nC)

V_GS= 10 V

0.240

RoHS*

COMPLIANT

9.2

• Fully Avalanche Rated

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

D²PAK (TO-263)

Single

DESCRIPTION

Fifth generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

I²PAK (TO-262)

TO-220

N-Channel MOSFET

The D²PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on

resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2.0 W in a typical surface mount application.

ORDERING INFORMATION

Package

TO-220

D²PAK (TO-263)

IRF644NSPbF

SiHF644NS-E3

IRF644NS

D²PAK (TO-263)

IRF644NSTRLPbF^a

SiHF644NSTL-E3^a

IRF644NSTRL^a

D²PAK (TO-263)

IRF644NSTRRPbF^a

SiHF644NSTR-E3^a

IRF644NSTRR^a

SiHF644NSTR^a

I²PAK (TO-262)

IRF644NLPbF

SiHF644NL-E3

IRF644NL

IRF644NPbF

SiHF644N-E3

IRF644N

Lead (Pb)-free

SnPb

SiHF644N

SiHF644NS

SiHF644NSTL^a

SiHF644NL

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

V_GSat 10 V

I_D

9.9

Pulsed Drain Current^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy^b

1.0

180^e

8.4

W/°C

E_AS

I_AR

Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

E_AR

P_D

_C= 25 °C

150

7.9

dV/dt

V/ns

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91038

S-Pending-Rev. A, 19-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与IRF644NPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF644NS	VISHAY	获取价格	Power MOSFET
IRF644NS	INFINEON	获取价格	Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
IRF644NSPBF	VISHAY	获取价格	Power MOSFET
IRF644NSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
IRF644NSTRL	VISHAY	获取价格	Power MOSFET
IRF644NSTRL	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 14A I(D) \| TO-263AB
IRF644NSTRLPBF	VISHAY	获取价格	Power MOSFET
IRF644NSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
IRF644NSTRR	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 14A I(D) \| TO-263AB
IRF644NSTRR	VISHAY	获取价格	Power MOSFET

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