是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 18 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 139 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF640C | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Met | |
IRF640D1 | MOTOROLA |
获取价格 |
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
IRF640F | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IRF640FI | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-220VAR | |
IRF640FP | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET | |
IRF640FPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IRF640FX | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IRF640L | INFINEON |
获取价格 |
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) | |
IRF640L | VISHAY |
获取价格 |
Power MOSFET | |
IRF640L | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Met |