Datasheet > IRF634S, SiHF634S

IRF634S, SiHF634S

更新时间： 2024-11-29 14:55:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	212K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF634S, SiHF634S 数据手册

浏览型号IRF634S, SiHF634S的Datasheet PDF文件第2页

浏览型号IRF634S, SiHF634S的Datasheet PDF文件第3页

浏览型号IRF634S, SiHF634S的Datasheet PDF文件第4页

浏览型号IRF634S, SiHF634S的Datasheet PDF文件第5页

浏览型号IRF634S, SiHF634S的Datasheet PDF文件第6页

IRF634S, SiHF634S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

D²PAK (TO-263)

• Available in tape and reel

• Dynamic dv/dt rating

• Repetitive avalanche rated

• Fast switching

Available

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

N-Channel MOSFET

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



PRODUCT SUMMARY

V_DS(V)

250

DESCRIPTION

R_DS(on)()

V_GS= 10 V

0.45

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK (TO-263) is a surface-mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The

D²PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface-mount application.

Q_gmax. (nC)

6.5

_gs(nC)

_gd(nC)

Configuration

Single

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF634STRR-GE3 ^a

IRF634STRRPbF ^a

Lead (Pb)-free and halogen-free

Lead (Pb)-free

SiHF634S-GE3

IRF634STRLPbF ^a

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

250

V_GS

_C= 25 °C

8.1

5.1

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

0.59

0.025

300

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Avalanche current ^a

E_AS

I_AR

8.1

Repetitive avalanche energy

E_AR

7.4

Maximum power dissipation

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dv/dt ^c

T_C= 25 °C

T_A= 25 °C

3.1

4.8

P_D

V/ns

°C

dv/dt

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

300

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V, starting T_J= 25 °C, L = 7.3 mH, R_g= 25 , I_AS= 8.1 A (see fig. 12)

c. I_SD 8.1 A, di/dt  120 A/μs, V_DD V_DS, T_J 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S20-0682-Rev. D, 07-Sep-2020

Document Number: 91035

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRF634S, SiHF634S相关器件

型号	品牌	获取价格	描述	数据表
IRF634SPBF	VISHAY	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634SPBF	INFINEON	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634SR	FAIRCHILD	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634STRL	VISHAY	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634STRLPBF	VISHAY	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634STRR	INFINEON	获取价格	暂无描述
IRF634STRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF634STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me
IRF635	INFINEON	获取价格	Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Me

与IRF634S, SiHF634S相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

47
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

65
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF634S, SiHF634S

IRF634S, SiHF634S 数据手册

与IRF634S, SiHF634S相关器件

与IRF634S, SiHF634S相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRF634S, SiHF634S

IRF634S, SiHF634S 数据手册

与IRF634S, SiHF634S相关器件

与IRF634S, SiHF634S相关文章

您还可以找

您在本页遇到什么问题？