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IRF611-002 PDF预览

IRF611-002

更新时间: 2024-11-25 07:07:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 42K
描述
Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRF611-002 数据手册

  

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IRF611-002PBF INFINEON

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3.3A, 150V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET
IRF611-003PBF INFINEON

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IRF611-005 INFINEON

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Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF611-006 INFINEON

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Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF611-006PBF INFINEON

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3.3A, 150V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET
IRF611-009PBF INFINEON

获取价格

Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF611-010 INFINEON

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Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF611-011 INFINEON

获取价格

Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRF611-011PBF INFINEON

获取价格

Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Met