生命周期: | Active | 包装说明: | CHIP CARRIER, R-XBCC-N3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.66 | 雪崩能效等级(Eas): | 340 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 31 A |
最大漏源导通电阻: | 0.06 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 124 A | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF5N5210SCV | INFINEON |
获取价格 |
Power Field-Effect Transistor, 31A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Met | |
IRF5N5210SCX | INFINEON |
获取价格 |
Transistor, | |
IRF5N60 | SUNTAC |
获取价格 |
POWER MOSFET | |
IRF5NJ3315 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.08ohm, Id=20A) | |
IRF5NJ3315PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Met | |
IRF5NJ3315SCV | INFINEON |
获取价格 |
150V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package - Screening Level TXV | |
IRF5NJ3315SCX | INFINEON |
获取价格 |
150V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package - Screening Level TX | |
IRF5NJ5305 | INFINEON |
获取价格 |
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-22A*) | |
IRF5NJ5305PBF | INFINEON |
获取价格 |
暂无描述 | |
IRF5NJ5305SCS | INFINEON |
获取价格 |
-55V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package - Standard Packaging |