Datasheet > IRF5N3710SCX

IRF5N3710SCX

更新时间： 2024-11-21 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	116K
描述
100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - Screening Level TX

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IRF5N3710SCX 数据手册

PD - 94235A

HEXFET^®POWER MOSFET

SURFACE MOUNT (SMD-1)

IRF5N3710

100V, N-CHANNEL

Product Summary

Part Number

RDS(on)

DSS

IRF5N3710

100V

0.028Ω 45A

Fifth Generation HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievethelowestpossibleon-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

providesthedesignerwithanextremelyefficientdevice

for use in a wide variety of applications.

SMD-1

Features:

Low RDS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

Light Weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

180

@ T = 25°C

125

W/°C

Linear Derating Factor

1.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

250

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

12.5

3.7

V/ns

dv/dt

-55 to 150

Storage Temperature Range

^oC

STG

Package Mounting Surface Temperature

Weight

300 (for 5 s)

2.6 (Typical)

For footnotes refer to the last page

www.irf.com

7/9//01

12 3 4 5 6 7

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