生命周期: | Active | 包装说明: | HERMETIC SEALED, TO-254AA, 3 PIN |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.83 | 雪崩能效等级(Eas): | 520 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 34 A | 最大漏极电流 (ID): | 34 A |
最大漏源导通电阻: | 0.07 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-254AA | JESD-30 代码: | S-XSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 125 W |
最大脉冲漏极电流 (IDM): | 136 A | 参考标准: | MIL-19500 |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 220 ns |
最大开启时间(吨): | 178 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF5M5210U | INFINEON |
获取价格 |
Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Met |
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IRF5M5210UPBF | INFINEON |
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暂无描述 |
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IRF5N3205 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.008ohm, Id=55A*) |
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IRF5N3205_05 | INFINEON |
获取价格 |
HEXFET POWER MOSFET SURFACE MOUNT (SMD-1) |
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IRF5N3205SCV | INFINEON |
获取价格 |
55V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - Screening Level TXV |
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IRF5N3415 | INFINEON |
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POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.042ohm, Id=37.5A) |
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IRF5N3415SCV | INFINEON |
获取价格 |
150V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - Screening Level TXV |
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IRF5N3710 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.028ohm, Id=45A) |
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IRF5N3710SCV | INFINEON |
获取价格 |
100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - Screening Level TXV |
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IRF5N3710SCX | INFINEON |
获取价格 |
100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - Screening Level TX |
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