是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | SFM | 包装说明: | TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.11 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 69 mJ |
配置: | SINGLE | 最小漏源击穿电压: | 80 V |
最大漏极电流 (Abs) (ID): | 14 A | 最大漏极电流 (ID): | 14 A |
最大漏源导通电阻: | 0.16 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 79 W |
最大脉冲漏极电流 (IDM): | 56 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF531-001 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF531-002 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF531-002PBF | INFINEON |
获取价格 |
14A, 80V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET | |
IRF531-003PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF531-004PBF | INFINEON |
获取价格 |
14A, 80V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET | |
IRF531-005 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF531-005PBF | INFINEON |
获取价格 |
14A, 80V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET | |
IRF531-006PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF531-009 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF531-009PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Meta |