Datasheet > IRF530S, SiHF530S

IRF530S, SiHF530S

更新时间： 2024-09-16 14:53:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	212K
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Power MOSFET

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IRF530S, SiHF530S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

D²PAK (TO-263)

• Available in tape and reel

• Dynamic dv/dt rating

• Repetitive avalanche rated

• 175 °C operating temperature

• Fast switching

Available

• Ease of paralleling

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

N-Channel MOSFET

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



PRODUCT SUMMARY

V_DS(V)

100

DESCRIPTION

R_DS(on)()

V_GS= 10 V

0.16

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK (TO-263) is a surface-mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The

D²PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface-mount application.

Q_gmax. (nC)

5.5

_gs(nC)

_gd(nC)

Configuration

Single

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF530S-GE3

IRF530SPbF

D²PAK (TO-263)

SiHF530STRL-GE3 ^a

IRF530STRLPbF ^a

D²PAK (TO-263)

SiHF530STRR-GE3 ^a

IRF530STRRPbF ^a

Lead (Pb)-free and halogen-free

Lead (Pb)-free

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

100

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

0.59

0.025

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Avalanche current ^a

E_AS

I_AR

Repetitive avalanche energy ^a

E_AR

8.8

Maximum power dissipation

T_C= 25 °C

P_D

V/ns

°C

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dv/dt ^c

T_A= 25 °C

3.7

dv/dt

5.5

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +175

300

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 25 V, starting T_J= 25 °C, L = 528 μH, R_g= 25 , I_AS= 14 A (see fig. 12)

c. I_SD 14 A, di/dt  140 A/μs, V_DD V_DS, T_J 175 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S20-0683-Rev. D, 07-Sep-2020

Document Number: 91020

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRF530S, SiHF530S相关器件

型号	品牌	获取价格	描述	数据表
IRF530SPBF	VISHAY	获取价格	Power MOSFET
IRF530SPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF530STR	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
IRF530STRL	VISHAY	获取价格	Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
IRF530STRLPBF	VISHAY	获取价格	Power MOSFET
IRF530STRR	INFINEON	获取价格	Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
IRF530STRRPBF	VISHAY	获取价格	Power MOSFET
IRF530U2	MOTOROLA	获取价格	14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF530UA	MOTOROLA	获取价格	14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF530W	MOTOROLA	获取价格	Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Met

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