Datasheet > IRF530ND

IRF530ND

更新时间： 2024-10-29 23:58:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	104K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 17A I(D) \| CHIP

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IRF530ND 数据手册

IRF530ND

N-Channel Enhancement-Mode MOSFET DIE

100V R

0.11Ω I 17A

DS(ON)

Chip Geometry

Source

Gate

Physical Characteristics

• Die size : 3890 X 1880 µm (153.1 X 74.0 mils)

Features

• Dynamic dv/dt Rating • Repetitive Avalanche Rated

• 175°C Operating Temperature • Ease of Paralleling

• Fast Switching for High Efficiency

• Simple Drive Requirements

• Metalization:

Top:

Al/Si/Cu

Back: Ti/Ni/Ag

• Metal Thickness:

• Planar Technology

Top:

3.0 µm

Back: 1.4 µm

• Die thickness: 9 - 13 mils

• Bonding Area:

Source: Full metalized surface of source region

Gate: 412 x 512 µm

• Recommended Wire Bonding:

Source: 12 mil diameter Al wire (2 wires preferred)

Gate: 5 mil diameter Al wire

Maximum Ratings (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_DS

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

Continuous Drain Current

V_GS=10V

Pulsed Drain Current⁽¹⁾

T_C= 25°C

T_C= 100°C

I_D

I_DM

P_D

Maximum Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy⁽²⁾

Avalanche Current⁽¹⁾

T_C= 25°C

W/°C

0.53

150

E_AS

I_AR

Repetitive Avalanche Energy⁽¹⁾

Peak Diode Recovery⁽³⁾

E_AR

7.9

dv/dt

T_J, T_stg

5.0

V/ns

°C

Operating Junction and Storage Temperature Range

–55 to 175

Notes: (1) Repetitive rating; pulse width limited by max. junction temperature

(2) V_DD= 25V, starting T_J= 25°C, L = 3.1µH, R_G= 25Ω, I_AS= 9.0A

(3) I_SD≤ 9.0A, di/dt ≤ 520A/µs, V_DD≤ V_(BR)DSS,T_J≤ 175°C

6/30/99

12 3 4 5

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