IRF530N

更新时间： 2024-10-31 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	213K
描述
Power MOSFET(Vdss=100V, Rds(on)=90mohm, Id=17A)

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IRF530N 数据手册

PD - 91351

IRF530N

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

V_DSS= 100V

l 175°C Operating Temperature

l Fast Switching

R_DS(on)= 90mΩ

l Fully Avalanche Rated

I_D= 17A

Description

AdvancedHEXFET^®PowerMOSFETsfromInternational

Rectifierutilizeadvancedprocessingtechniquestoachieve

extremelylowon-resistancepersiliconarea. Thisbenefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

knownfor,providesthedesignerwithanextremelyefficient

andreliabledeviceforuseinawidevarietyofapplications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.47

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

9.0

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

7.0

V/ns

7.4

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

2.15

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

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IRF530N 替代型号

型号	品牌	替代类型	描述	数据表
IRF530	VISHAY	类似代替	Power MOSFET
IRF530NPBF	INFINEON	功能相似	HEXFET㈢ Power MOSFET

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IRF530NL-102	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Met
IRF530NL-102PBF	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Met
IRF530NLPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF530NPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF530NS	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
IRF530NS	NJSEMI	获取价格	Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK
IRF530NSPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF530NSTRLPBF	INFINEON	获取价格	Advanced Process Technology