IRF530L

更新时间： 2024-10-31 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关局域网
页数	文件大小	规格书
10页	180K
描述
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF530L 数据手册

PD - 91352A

IRF530NS/L

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount (IRF530NS)

l Low-profile through-hole (IRF530NL)

l 175°C Operating Temperature

l Fast Switching

V_DSS=100V

R_DS(on)= 0.11Ω

l Fully Avalanche Rated

I_D= 17A

Description

FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessing

techniques to achieve extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and ruggedized device design

that HEXFET Power MOSFETs are well known for, provides the designer with

an extremely efficient and reliable device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of accommodating die

sizes up to HEX-4. It provides the highest power capability and the lowest

possible on-resistance in any existing surface mount package. The D²Pak is

suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF530NL) is available for low-profile applications.

T O -26 2

Pak

Absolute Maximum Ratings

Parameter

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

Linear Derating Factor

0.53

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energyꢀ

Avalanche Current•9.0

150

7.9

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.9

Units

R_θJC

°C/W

R_θJA

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

www.irf.com

5/13/98

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRF530L相关器件

型号	品牌	获取价格	描述	数据表
IRF530N	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds(on)=90mohm, Id=17A)
IRF530N	NXP	获取价格	N-channel TrenchMOS transistor
IRF530N	INTERSIL	获取价格	22A, 100V, 0.064 Ohm, N-Channel Power MOSFET
IRF530N	MOTOROLA	获取价格	Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
IRF530N	NJSEMI	获取价格	Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB
IRF530ND	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 17A I(D) \| CHIP
IRF530NL	INFINEON	获取价格	HEXFET Power MOSFET
IRF530NL-102	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Met
IRF530NL-102PBF	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Met
IRF530NLPBF	INFINEON	获取价格	HEXFET Power MOSFET