Datasheet > IRF5305PBF

IRF5305PBF

更新时间： 2024-05-23 22:23:23

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	718K
描述
种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C时）:-31A;Vgs(th)(V):±20;漏源导通电阻:60mΩ@-10V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF5305PBF 数据手册

IRF5305

-60V P-Channel MOSFET

UMW

Description

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levelstoapproximately50watts. Thelowthermalresistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Features

ꢃ

V_DS(V) = -60V

I_D= -31A (V_GS= -10V)

ꢃ

^DS(ON)< 60mΩ (V_GS= -10V)

ꢃ

ꢃ Advanced Process Technology

ꢃ Dynamic dv/dt Rating

ꢃ 175°C Operating Temperature

ꢃ Fast Switching

Lead-Free

ꢃ

Fully Avalanche Rated

Absolute Maximum Ratings

Parameter

Max.

-31

-22

-110

110

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current ꢀ

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.71

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energyꢁ

Avalanche Currentꢀ

280

-16

E_AR

dv/dt

T_J

Repetitive Avalanche Energyꢀ

Peak Diode Recovery dv/dt ꢂ

Operating Junction and

V/ns

-5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

1.4

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRF5305PBF相关器件

型号	品牌	获取价格	描述	数据表
IRF5305S	INFINEON	获取价格	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
IRF5305S	FREESCALE	获取价格	HEXFETÂ® Power MOSFET
IRF5305SLPBF	INFINEON	获取价格	Advanced Process Technology
IRF5305SPBF	KERSEMI	获取价格	Advanced Process Technology
IRF5305SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF5305STRL	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 55V V(BR)DSS \| 31A I(D) \| TO-263AB
IRF5305STRL	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-55V;持续漏极电流（Id）（在25°C
IRF5305STRLPBF	INFINEON	获取价格	HEXFETÂ® Power MOSFET
IRF5305STRR	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 55V V(BR)DSS \| 31A I(D) \| TO-263AB
IRF5305STRRPBF	INFINEON	获取价格	Advanced Process Technology