5秒后页面跳转
IRF511-005PBF PDF预览

IRF511-005PBF

更新时间: 2024-11-26 03:34:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 42K
描述
Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRF511-005PBF 数据手册

  

与IRF511-005PBF相关器件

型号 品牌 获取价格 描述 数据表
IRF511-006 INFINEON

获取价格

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF511-006PBF INFINEON

获取价格

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF511-009PBF INFINEON

获取价格

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF511-010PBF INFINEON

获取价格

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF511-011 INFINEON

获取价格

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF511-011PBF INFINEON

获取价格

5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET
IRF511-012PBF INFINEON

获取价格

5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET
IRF511-013 INFINEON

获取价格

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF511-013PBF INFINEON

获取价格

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF511R ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5.6A I(D) | TO-220AB