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IRF511-005 PDF预览

IRF511-005

更新时间: 2024-11-29 07:54:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 42K
描述
Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRF511-005 数据手册

  

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IRF511-005PBF INFINEON

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Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF511-006 INFINEON

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Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF511-006PBF INFINEON

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Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF511-009PBF INFINEON

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Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF511-010PBF INFINEON

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Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF511-011 INFINEON

获取价格

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF511-011PBF INFINEON

获取价格

5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET
IRF511-012PBF INFINEON

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5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET
IRF511-013 INFINEON

获取价格

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
IRF511-013PBF INFINEON

获取价格

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met