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IRF511-002 PDF预览

IRF511-002

更新时间: 2024-11-29 04:31:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 42K
描述
Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRF511-002 数据手册

  

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Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met
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5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET