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IRF510STRRPBF

更新时间： 2024-11-25 20:02:23
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 187K
描述
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

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IRF510STRRPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PSSO-G2
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99Factory Lead Time：6 weeks
风险等级：5.01其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：100 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：5.6 A最大漏极电流 (ID)：5.6 A
最大漏源导通电阻：0.54 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：43 W最大脉冲漏极电流 (IDM)：20 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF510STRRPBF 数据手册

 浏览型号IRF510STRRPBF的Datasheet PDF文件第2页浏览型号IRF510STRRPBF的Datasheet PDF文件第3页浏览型号IRF510STRRPBF的Datasheet PDF文件第4页浏览型号IRF510STRRPBF的Datasheet PDF文件第5页浏览型号IRF510STRRPBF的Datasheet PDF文件第6页浏览型号IRF510STRRPBF的Datasheet PDF文件第7页 
IRF510S, SiHF510S  
www.vishay.com  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Surface mount  
PRODUCT SUMMARY  
VDS (V)  
DS(on) ()  
Qg max. (nC)  
100  
• Available in tape and reel  
• Dynamic dV/dt rating  
• Repetitive avalanche rated  
• 175 °C operating temperature  
• Fast switching  
R
VGS = 10 V  
0.54  
Available  
8.3  
2.3  
Q
gs (nC)  
gd (nC)  
Available  
Q
3.8  
Configuration  
Single  
• Ease of paralleling  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
D
D2PAK (TO-263)  
Note  
*
This datasheet provides information about parts that are  
RoHS-compliant and / or parts that are non-RoHS-compliant. For  
example, parts with lead (Pb) terminations are not RoHS-compliant.  
Please see the information / tables in this datasheet for details.  
G
DESCRIPTION  
Third generation power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
D
G
S
S
N-Channel MOSFET  
The D2PAK (TO-263) is a surface mount power package  
capable of accommodating die sizes up to HEX-4. It  
provides the highest power capability and the lowest  
possible on-resistance in any existing surface mount  
package. The D2PAK (TO-263) is suitable for high current  
applications because of its low internal connection  
resistance and can dissipate up to 2.0 W in a typical surface  
mount application.  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
SiHF510S-GE3  
IRF510SPbF  
D2PAK (TO-263)  
D2PAK (TO-263)  
Lead (Pb)-free and Halogen-free  
SiHF510STRL-GE3 a  
IRF510STRLPbF a  
SiHF510STL-E3 a  
SiHF510STRR-GE3 a  
IRF510STRRPbF a  
SiHF510STR-E3 a  
Lead (Pb)-free  
SiHF510S-E3  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
Gate-Source Voltage  
SYMBOL  
VDS  
LIMIT  
100  
20  
UNIT  
V
VGS  
TC = 25 °C  
TC = 100 °C  
5.6  
4.0  
20  
Continuous Drain Current  
VGS at 10 V  
ID  
A
Pulsed Drain Current a  
IDM  
Linear Derating Factor  
0.29  
0.025  
75  
5.6  
4.3  
W/°C  
Linear Derating Factor (PCB mount) e  
Single Pulse Avalanche Energy b  
Avalanche Current a  
EAS  
IAR  
EAR  
mJ  
A
mJ  
Repetitive Avalanche Energy a  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB mount) e  
Peak Diode Recovery dV/dt c  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak temperature) d  
TC = 25 °C  
TA = 25 °C  
43  
3.7  
5.5  
PD  
W
V/ns  
°C  
dV/dt  
TJ, Tstg  
-55 to +175  
300  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12).  
c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
S15-2693-Rev. D, 16-Nov-15  
Document Number: 91016  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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