Datasheet > IRF4905STRLP

IRF4905STRLP

更新时间： 2024-05-23 22:23:38

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
9页	1079K
描述
种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C时）:-42A;Vgs(th)(V):±20;漏源导通电阻:20mΩ@-10V

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IRF4905STRLP 数据手册

UMW

IRF4905

-60V P-Channel MOSFET

Description

Features of this design are a 150°C junction oper-

ating temperature, fast switching speed and im-

proved repetitive avalanche rating . These features

combine to make this design an extremely efficient

and reliable device for use in a wide variety of other

applications.

Features

V_DS(V) = -60V

I_D= -42A (V_GS= -10V)

R_DS(ON)< 20mΩ (V_GS= -10V)

TO-362

Ultra Low On-Resistance

150°C Operating Temperature

Fast Switching

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current ^1.

-70

@ T = 25°C

-44

@ T = 100°C

-42

@ T = 25°C

-280

170

@T = 25°C Power Dissipation

W/°C

1.3

Linear Derating Factor

± 20

Gate-to-Source Voltage

Single Pulse Avalanche Energy^2.

Single Pulse Avalanche Energy Tested Value ^6.

E_{AS (Thermally limited)}

140

790

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

Avalanche Current

Repetitive Avalanche Energy ^5.

E_AR

-55 to + 150

Operating Junction and

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw ^7.

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

Max.

0.75

Units

Junction-to-Case ^8.

Junction-to-Ambient (PCB Mount, steady state) ^7.8.

R_θJC

R_θJA

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...9

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