Datasheet > IRF4905PBF_15

IRF4905PBF_15

更新时间： 2024-11-26 00:33:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	187K
描述
Advanced Process Technology

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中文翻译

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数据手册

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IRF4905PBF_15 数据手册

PD - 94816

IRF4905PbF

HEXFET^®Power MOSFET

ꢃ Advanced Process Technology

ꢃ Ultra Low On-Resistance

ꢃ Dynamic dv/dt Rating

ꢃ 175°C Operating Temperature

ꢃ Fast Switching

V_DSS= -55V

R_DS(on)= 0.02Ω

ꢃ P-Channel

ꢃ Fully Avalanche Rated

ꢃ Lead-Free

Description

I_D= -74A

Fifth Generation HEXFETs from InternationalRectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power

dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-

220 contribute to its wide acceptance throughout the

industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

-74

-52

-260

200

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current ꢀ

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

1.3

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energyꢁ

Avalanche Currentꢀ

930

-38

E_AR

dv/dt

T_J

Repetitive Avalanche Energyꢀ

Peak Diode Recovery dv/dt ꢂ

Operating Junction and

-5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Typ.

–––

0.50

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.75

–––

°C/W

11/6/03

12 3 4 5 6 7...9

中文翻译

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