IRF4905

更新时间： 2024-09-15 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	110K
描述
Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)

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IRF4905 数据手册

PD - 9.1280C

IRF4905

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= -55V

R_DS(on)= 0.02Ω

l P-Channel

l Fully Avalanche Rated

Description

I_D= -74A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

-74

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-52

-260

200

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

1.3

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

930

-38

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

-5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.75

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

8/25/97

12 3 4 5 6 7 8

中文翻译

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IRF4905 替代型号

型号	品牌	替代类型	描述	数据表
IRF4905STRLPBF	INFINEON	功能相似	HEXFETÂ® Power MOSFET
IRF4905SPBF	INFINEON	功能相似	HEXFET Power MOSFET
IRF4905PBF	INFINEON	功能相似	HEXFET Power MOSFET

与IRF4905相关器件

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IRF4905L	INFINEON	获取价格	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)
IRF4905L	KERSEMI	获取价格	Advanced Process Technology
IRF4905LPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF4905PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF4905PBF_15	INFINEON	获取价格	Advanced Process Technology
IRF4905S	KERSEMI	获取价格	Advanced Process Technology
IRF4905S	INFINEON	获取价格	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A)
IRF4905SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF4905STRLHR	INFINEON	获取价格	Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRF4905STRLP	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C