是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 8.6 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 130 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF450 | FAIRCHILD |
获取价格 |
13A, 500V, 0.400 Ohm, N-Channel Power MOSFET | |
IRF450 | SAMSUNG |
获取价格 |
N-CHANNEL POWER MOSFETS | |
IRF450 | INTERSIL |
获取价格 |
13A, 500V, 0.400 Ohm, N-Channel Power MOSFET | |
IRF450 | INFINEON |
获取价格 |
TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A) | |
IRF450 | SEME-LAB |
获取价格 |
N-CHANNEL POWER MOSFET | |
IRF450 | NJSEMI |
获取价格 |
Trans MOSFET N-CH 500V 13A 3-Pin(2+Tab) TO-3 | |
IRF450_10 | SEME-LAB |
获取价格 |
N-CHANNEL POWER MOSFET | |
IRF450E | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF450EB | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
IRF450EBPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta |