Datasheet > IRF330

IRF330

更新时间： 2024-11-05 22:31:23

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	61K
描述
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

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IRF330 数据手册

IRF330

Data Sheet

March 1999

File Number 1570.4

5.5A, 400V, 1.000 Ohm, N-Channel

Power MOSFET

Features

• 5.5A, 400V

• r = 1.000Ω

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17414.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRF330

TO-204AA

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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