Datasheet > IRF3205

IRF3205

更新时间： 2024-06-27 12:13:26

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	87K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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IRF3205 数据手册

SDMIPDTTyyppee

MOSFIECT

HEXFET Power MOSFET

IRF3205

TO-220

2.54 ±0.20

10.16 ±0.20

ø3.18 ±0.10

(0.70)

■ Features

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● Fast Switching

(1.00x45°)

MAX1.47

0.80 ±0.10

● Fully Avalanche Rated

1 2

0.35 ±0.10

+0.10

–0.05

0.50

2.76 ±0.20

2.54TYP

[2.54 ±0.20]

1. GATE

9.40 ±0.20

2.DRAIN

3. SOURCE

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Continuous Drain Current, VGS @ 10V,TC = 25℃

Continuous Drain Current, VGS @ 10V,TC = 100℃

Pulsed Drain Current*1

Symbol

Rating

110

Unit

IDM

390

Power Dissipation

200

W/℃

Linear Derating Factor

1.3

Linear Derating Factor

VGS

IAR

± 20

Avalanche Current *1

Repetitive Avalanche Energy *1

Peak Diode Recovery dv/dt *2

Junction-to-Case

EAR

V/ns

dv/dt

RθJC

RθCS

RθJA

TJ.TSTG

0.75 (Max)

0.5

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

℃/W

62 (Max)

-55 to + 175

Operating Junction and Storage Temperature Range

℃

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 ISD ≤ 62A, di/dt ≤ 207A/µs, VDD ≤ V(BR)DSS,TJ ≤ 175℃

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