Datasheet > IRF1902PBF

IRF1902PBF

更新时间： 2024-09-13 03:35:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	134K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRF1902PBF 数据手册

PD - 95496

IRF1902PbF

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l N-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Lead-Free

V_DSS

20V

R_DS(on)max (mW)

85@V_GS= 4.5V

I_D

4.0A

170@V_GS= 2.7V

3.2A

Description

These N-Channel HEXFET^®power MOSFETs from

International Rectifier utilize advanced processing

techniquestoachievetheextremelylowon-resistance

per silicon area. This benefit provides the designer

with an extremely efficient device for use in battery

and load management applications..

SO-8

Top View

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devicescanbeusedinanapplicationwithdramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

4.2

3.4

P_D@T_A= 25°C

P_D@T_A= 70°C

Power Dissipation

2.5

1.6

Linear Derating Factor

0.02

mW/°C

V_GS

Gate-to-Source Voltage

± 12

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

www.irf.com

8/10/04

12 3 4 5 6 7...9

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