Datasheet > IRF1704

IRF1704

更新时间： 2024-01-22 05:59:04

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	103K
描述
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)

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IRF1704 数据手册

PD -94012B

AUTOMOTIVE MOSFET

IRF1704

HEXFET^®Power MOSFET

Benefits

l 200°C Operaing Temperature

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l Fast Switching

l Repetitive Avalanche Allowed

up to Tj Max

l Automotive Qualified (Q101)

Description

V_DSS= 40V

R_DS(on)= 0.004Ω

I_D= 170A

Specifically designed for Automotive applications, this HEXFET^®power

MOSFET has a 200°C max operating temperature with a Stripe Planar

design that utilizes the latest processing techniques to achieve extremely low

on-resistance per silicon area. Additional features of this HEXFET^®power

MOSFET are fast switching speed and improved repetitive avalanche rating.

The continuing technology leadership of Internationl Rectifier provides 200°C

operating temperature in a plastic package. At high ambient temperatures, the

IRF1704 can carryupto 20%morecurrentthansimilar 175°CTjmax devices

in the same package outline. This makes this part ideal for existing and

emerging under-the-hood automotive applications such as Electric Power

Steering (EPS), Fuel / Water Pump Control and wide variety of other

applications.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

170

120

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

680

P_D@T_C= 25°C

Power Dissipation

230

W/°C

Linear Derating Factor

1.3

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

670

100

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

1.9

-55 to + 200

T_STG

T_LEAD

Storage Temperature Range

Lead Temperature

°C

175

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.75

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

www.irf.com

02/13/02

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与IRF1704相关器件

型号	品牌	获取价格	描述	数据表
IRF1704PBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Met
IRF1730G	INFINEON	获取价格	Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=3.7A)
IRF-18.2+/-10%	VISHAY	获取价格	General Fixed Inductor, 1 ELEMENT, 8.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL L
IRF-18.210%	VISHAY	获取价格	General Fixed Inductor, 1 ELEMENT, 8.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
IRF-18.2UH+-5%ERE2	VISHAY	获取价格	General Purpose Inductor, 8.2uH, 5%, Ferrite-Core,
IRF-18.2UH+-5%ESE2	VISHAY	获取价格	General Purpose Inductor, 8.2uH, 5%, Ferrite-Core,
IRF-18.2UH+-5%EVE2	VISHAY	获取价格	General Purpose Inductor, 8.2uH, 5%, Ferrite-Core,
IRF-182+/-10%	VISHAY	获取价格	General Fixed Inductor, 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LE
IRF-1820UH+-10%RJ4	VISHAY	获取价格	General Purpose Inductor, 820uH, 10%, Ferrite-Core,
IRF-1820UH+-5%RJ1	VISHAY	获取价格	General Purpose Inductor, 820uH, 5%, Ferrite-Core,

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