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IRF1607PBF PDF预览

IRF1607PBF

更新时间: 2024-01-22 06:09:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 160K
描述
AUTOMOTIVE MOSFET

IRF1607PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.11
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):1250 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (Abs) (ID):142 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.0075 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):380 W最大脉冲漏极电流 (IDM):570 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF1607PBF 数据手册

 浏览型号IRF1607PBF的Datasheet PDF文件第2页浏览型号IRF1607PBF的Datasheet PDF文件第3页浏览型号IRF1607PBF的Datasheet PDF文件第4页浏览型号IRF1607PBF的Datasheet PDF文件第5页浏览型号IRF1607PBF的Datasheet PDF文件第6页浏览型号IRF1607PBF的Datasheet PDF文件第7页 
PD -95487  
AUTOMOTIVE MOSFET  
IRF1607PbF  
Typical Applications  
O
O
O
O
42 Volts Automotive Electrical Systems  
HEXFET® Power MOSFET  
Electrical Power Steering (EPS)  
Integrated Starter Alternator  
Lead-Free  
D
VDSS = 75V  
Benefits  
O
O
O
O
O
O
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
R
DS(on) = 0.0075Ω  
G
ID = 142A†  
S
Automotive [Q101] Qualified  
Description  
Specifically designed for Automotive applications, this  
Stripe Planar design of HEXFET® Power MOSFETs  
utilizes the lastest processing techniques to achieve  
extremelylow on-resistancepersiliconarea. Additional  
features of this HEXFET power MOSFET are a 175°C  
junction operating temperature, fast switching speed  
andimprovedrepetitiveavalancherating.Thesebenefits  
combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a  
wide variety of other applications.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
142†  
100†  
A
570  
PD @TC = 25°C  
Power Dissipation  
380  
W
W/°C  
V
Linear Derating Factor  
2.5  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
1250  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
See Fig.12a, 12b, 15, 16  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy‡  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
mJ  
V/ns  
5.2  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.40  
–––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
www.irf.com  
1
06/30/04  

IRF1607PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFB3077PBF INFINEON

类似代替

High Efficiency Synchronous Rectification in SMPS
IRF1607 INFINEON

类似代替

Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=

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