Datasheet > IRF1530N

IRF1530N

更新时间： 2024-02-21 15:10:46

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IRF1530N 数据手册

PD -9.1353

IRFI530N

PRELIMINARY

HEXFET^®Power MOSFET

l Advanced Process Technology

l Isolated Package

l High Voltage Isolation = 2.5KVRMS …

l Sink to Lead Creepage Dist. = 4.8mm

l Fully Avalanche Rated

V_DSS= 100V

R_DS(on)= 0.11W

I_D= 11A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design for which HEXFET Power MOSFETs are

well known, provides the designer with an extremely

efficient device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

and external heatsink. This isolation is equivalent to using

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current ƒ•†

7.8

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.22

V_GS

E_AS

I_AR

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ‚†

Avalanche Current•†

150

9.0

E_AR

dv/dt

T_J

Repetitive Avalanche Current•†

Peak Diode Recovery dv/dt ƒ†

Operating Junction and

6.3

V/ns

5.2

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

°C

300 (1.6mm from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient

Min.

––––

Typ.

––––

Max.

4.5

Units

R_qJC

R_qJA

°C/W

12 3 4 5 6 7 8

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