Datasheet > IRF150

IRF150

更新时间： 2024-11-07 17:01:47

品牌	Logo	应用领域
TTELEC		/
页数	文件大小	规格书
2页	22K
描述
N-Channel Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF150 数据手册

IRF150

MECHANICAL DATA

Dimensions in mm (inches)

N–CHANNEL

POWER MOSFET

39.95 (1.573)

max.

30.40 (1.197)

30.15 (1.187)

17.15 (0.675)

16.64 (0.655)

V_DSS

100V

38A

I_D(cont)

R_DS(on)

4.09 (0.161)

3.84 (0.151)

dia.

2 plcs.

Ω

0.055

FEATURES

• HERMETICALLY SEALED TO–3 METAL

PACKAGE

20.32 (0.800)

18.80 (0.740)

dia.

• SIMPLE DRIVE REQUIREMENTS

• SCREENING OPTIONS AVAILABLE

1.57 (0.062)

1.47 (0.058)

dia.

2 plcs.

TO–3 Metal Package

Pin 1 – Gate

Pin 2 – Source

Case – Drain

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Gate – Source Voltage

Continuous Drain Current

±20V

38A

(V = 0 , T

= 25°C)

case

(V = 0 , T

= 100°C)

24A

Pulsed Drain Current

152A

Power Dissipation @ T = 25°C

case

150W

Linear Derating Factor

1.2W/°C

150mJ

38A

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

15mJ

dv/dt

T , T

Peak Diode Recovery

5.5V/ns

-55 to +150°C

300°C

Operating and Storage Temperature Range

Lead Temperature 1.6mm (0.63”) from case for 10 sec.

stg

Notes

1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%

2) @ V = 50V , L ≥ 160µH , R = 25Ω , Peak I = 38A , Starting T = 25°C

3) @ I ≤ 38A , di/dt ≤ 300A/µs , V ≤ BV

, T ≤ 150°C , Suggested R = 2.35Ω

J G

DSS

Prelim. 9/96

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

中文翻译

下载PDF

与IRF150相关器件

型号	品牌	获取价格	描述	数据表
IRF150-153	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 40 A, 60 V/100 V
IRF1503	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRF1503L	INFINEON	获取价格	HEXFET Power MOSFET
IRF1503LPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF1503PBF	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRF1503S	INFINEON	获取价格	HEXFET Power MOSFET
IRF1503SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF1503STRL	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Me
IRF1503STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Me
IRF1503STRR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Me