IRF1312PBF

更新时间： 2024-09-24 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
11页	276K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRF1312PBF 数据手册

PD-95409A

IRF1312PbF

IRF1312SPbF

IRF1312LPbF

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

l Motor Control

V_DSS

R_DS(on)max

I_D

80V

10mΩ

95A

l Uninterrutible Power Supplies

Lead-Free

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRF1312S

TO-262

IRF1312L

TO-220AB

IRF1312

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

380

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

210

Linear Derating Factor

1.4

W/°C

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 20

Peak Diode Recovery dv/dt

Operating Junction and

5.1

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

0.75

–––

Units

R_θJC

R_θCS

R_θJA

–––

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB mount)

°C/W

Notes through are on page 11

www.irf.com

12/23/04

12 3 4 5 6 7...11

中文翻译

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IRF1312PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF2807ZPBF	INFINEON	类似代替	AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

与IRF1312PBF相关器件

型号	品牌	获取价格	描述	数据表
IRF1312S	INFINEON	获取价格	HEXFET Power MOSFET
IRF1312SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF1312STRL	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 95A I(D) \| TO-263AB
IRF1312STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRF1312STRR	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 95A I(D) \| TO-263AB
IRF1312STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRF131R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 14A I(D) \| TO-204AA
IRF132	SAMSUNG	获取价格	N-CHANNEL POWER MOSFETS
IRF132	VISHAY	获取价格	Power Field-Effect Transistor, 12A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
IRF132	ROCHESTER	获取价格	12A, 100V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA