Datasheet > IRF100B201

IRF100B201

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
9页	839K
描述
种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C时）:192A;Vgs(th)(V):±20;漏源导通电阻:4.2mΩ@10V

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IRF100B201 数据手册

IRF100B201

UMW

100 V

N-Channel

MOSFET

Application

 Brushed Motor drive applications

Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 DC/DC and AC/DC converters

 DC/AC Inverters

Benefits



 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free, RoHS Compliant, Halogen-Free



V_DS

100V

ꢀI =192A



DS(ON)

(at V =10V) < 4.2mΩ

Absolute Maximum Rating

Symbol

I_D@ T_C= 25°C

Parameter

Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V

Max.

192

Units

136

I_DM

Pulsed Drain Current 

Maximum Power Dissipation

Linear Derating Factor

690

441

2.9

P_D@T_C= 25°C

W/°C

V_GS

Gate-to-Source Voltage

± 20

T_J

T_STG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

E_{AS (Thermally limited)}

567

Single Pulse Avalanche Energy 

Single Pulse Avalanche Energy 

Single Pulse Avalanche Energy Tested Value 

Avalanche Current 

E_{AS (Thermally limited)}

E_{AS (tested)}

I_AR

1005

240

See Fig 15, 15, 23a, 23b

E_AR

Repetitive Avalanche Energy 

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...9

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