是否无铅: | 含铅 | 生命周期: | Transferred |
零件包装代码: | TO-267AB | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.09 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 雪崩能效等级(Eas): | 500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 11 A |
最大漏源导通电阻: | 0.52 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-267AB | JESD-30 代码: | R-CBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 极性/信道类型: | P-CHANNEL |
功耗环境最大值: | 125 W | 最大脉冲漏极电流 (IDM): | 44 A |
认证状态: | Not Qualified | 参考标准: | MIL-19500/595F |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 150 ns |
最大开启时间(吨): | 120 ns | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
JANTXV2N7237D | INFINEON | Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Met |
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JANTXV2N7237U | INFINEON | -200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7237U with Hermetic Pa |
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JANTXV2N7323D | RENESAS | 23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE |
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JANTXV2N7323H | RENESAS | 23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE |
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JANTXV2N7323R | RENESAS | 23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE |
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JANTXV2N7324D | RENESAS | 16A, 200V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL PACKAGE- |
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