5秒后页面跳转
JANTXV2N7237 PDF预览

JANTXV2N7237

更新时间: 2024-01-30 03:52:49
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 192K
描述
POWER MOSFET THRU-HOLE (TO-254AA)

JANTXV2N7237 技术参数

是否无铅: 含铅生命周期:Transferred
零件包装代码:TO-267AB包装说明:CHIP CARRIER, R-CBCC-N3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.09Is Samacsys:N
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):500 mJ
外壳连接:DRAIN配置:SINGLE
最小漏源击穿电压:200 V最大漏极电流 (ID):11 A
最大漏源导通电阻:0.52 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-267ABJESD-30 代码:R-CBCC-N3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER极性/信道类型:P-CHANNEL
功耗环境最大值:125 W最大脉冲漏极电流 (IDM):44 A
认证状态:Not Qualified参考标准:MIL-19500/595F
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):150 ns
最大开启时间(吨):120 nsBase Number Matches:1

JANTXV2N7237 数据手册

 浏览型号JANTXV2N7237的Datasheet PDF文件第2页浏览型号JANTXV2N7237的Datasheet PDF文件第3页浏览型号JANTXV2N7237的Datasheet PDF文件第4页浏览型号JANTXV2N7237的Datasheet PDF文件第5页浏览型号JANTXV2N7237的Datasheet PDF文件第6页浏览型号JANTXV2N7237的Datasheet PDF文件第7页 
PD - 90497F  
IRFM9240  
JANTX2N7237  
JANTXV2N7237  
JANS2N7237  
REF:MIL-PRF-19500/595  
200V, P-CHANNEL  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
Product Summary  
HEXFET® MOSFETTECHNOLOGY  
Part Number RDS(on)  
ID  
IRFM9240 0.51-11A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state resis-  
tance combined with high transconductance. HEXFET tran-  
sistors also feature all of the well-established advantages  
of MOSFETs, such as voltage control, very fast switching,  
ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, choppers,  
audio amplifiers, high energy pulse circuits, and virtually  
any application where high reliability is required. The  
HEXFET transistor’s totally isolated package eliminates the  
need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
TO-254AA  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Dynamic dv/dt Rating  
Light-weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= -10V, T = 25°C Continuous Drain Current  
-11  
-7.0  
D
D
GS  
GS  
C
A
I
= -10V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
-44  
DM  
@ T = 25°C  
P
D
125  
W
W/°C  
V
C
Linear Derating Factor  
1.0  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
-11  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
12.5  
-5.0  
mJ  
V/ns  
AR  
dv/dt  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
9.3 (typical)  
Lead Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
11/18/02  

与JANTXV2N7237相关器件

型号 品牌 描述 获取价格 数据表
JANTXV2N7237D INFINEON Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Met

获取价格

JANTXV2N7237U INFINEON -200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7237U with Hermetic Pa

获取价格

JANTXV2N7323D RENESAS 23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE

获取价格

JANTXV2N7323H RENESAS 23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE

获取价格

JANTXV2N7323R RENESAS 23A, 100V, 0.14ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE

获取价格

JANTXV2N7324D RENESAS 16A, 200V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL PACKAGE-

获取价格