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IR2131STR PDF预览

IR2131STR

更新时间: 2024-01-29 07:34:26
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管信息通信管理
页数 文件大小 规格书
8页 261K
描述
Half Bridge Based MOSFET Driver, 0.5A, BICMOS, PDSO28, MS-013AE, SOIC-28

IR2131STR 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:MS-013AE, SOIC-28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:18 weeks风险等级:1.67
Is Samacsys:N高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-PDSO-G28
长度:17.9 mm湿度敏感等级:3
功能数量:3端子数量:28
最高工作温度:125 °C最低工作温度:-40 °C
标称输出峰值电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:2.65 mm
最大供电电压:20 V最小供电电压:10 V
标称供电电压:15 V电源电压1-最大:620 V
电源电压1-分钟:5 V表面贴装:YES
技术:BICMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
断开时间:1 µs接通时间:2 µs
宽度:7.5 mmBase Number Matches:1

IR2131STR 数据手册

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Previous Datasheet  
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Data Sheet No. PD-6.032C  
IR2131  
3 HIGH SIDE AND 3 LOW SIDE DRIVER  
Features  
Product Summary  
n Floating channel designed for bootstrap operation  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
n Gate drive supply range from 10 to 20V  
n Undervoltage lockout for all channels  
n Over-current shutdown turns off all six drivers  
n Independent 3 high side & 3 low side drivers  
n Matched propagation delay for all channels  
n Outputs out of phase with inputs  
V
600V max.  
200 mA / 420 mA  
10 - 20V  
OFFSET  
I +/-  
O
V
OUT  
t
(typ.)  
1.3 & 0.6 µs  
700 ns  
on/off  
Deadtime (typ.)  
Packages  
Description  
The IR2131 is a high voltage, high speed power  
MOSFET and IGBT driver with three independent high  
and low side referenced output channels. Proprietary  
HVIC technology enables ruggedized monolithic  
construction. Logic inputs are compatible with 5V  
CMOS or LSTTL outputs. A current trip function which  
terminates all six outputs can be derived from an  
external current sense resistor. A shutdown input is  
provided for a customized shutdown function. An open  
drain FAULT signal is provided to indicate that any of  
the shutdowns has occurred. The output drivers  
feature a high pulse current buffer stage designed for  
minimum driver cross-conduction. Propagation delays  
are matched to simplify use in high frequency  
applications. The floating channels can be used to  
drive N-channel power MOSFETs or IGBTs in the high  
side configuration which operate up to 600 volts.  
Typical Connection  
CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL  
B-157  
To Order  
 
 

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