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IR2130JTRPBF PDF预览

IR2130JTRPBF

更新时间: 2024-02-23 13:25:38
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器接口集成电路光电二极管信息通信管理
页数 文件大小 规格书
26页 299K
描述
Half Bridge Based MOSFET Driver, 0.5A, BICMOS, PQCC32, PLASTIC, MS-018AC, LCC-44/32

IR2130JTRPBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SOP, SOP28,.4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:17 weeks 1 day风险等级:1.55
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/365495.1.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=365495
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=3654953D View:https://componentsearchengine.com/viewer/3D.php?partID=365495
Samacsys PartID:365495Samacsys Image:https://componentsearchengine.com/Images/9/IR2130STRPBF.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/IR2130STRPBF.jpgSamacsys Pin Count:28
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:28-Lead SOIC (wide body)Samacsys Released Date:2019-09-15 10:13:16
Is Samacsys:N接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G28湿度敏感等级:3
端子数量:28最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP28,.4
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:15 V
认证状态:Not Qualified子类别:MOSFET Drivers
标称供电电压:15 V表面贴装:YES
技术:MOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IR2130JTRPBF 数据手册

 浏览型号IR2130JTRPBF的Datasheet PDF文件第2页浏览型号IR2130JTRPBF的Datasheet PDF文件第3页浏览型号IR2130JTRPBF的Datasheet PDF文件第4页浏览型号IR2130JTRPBF的Datasheet PDF文件第5页浏览型号IR2130JTRPBF的Datasheet PDF文件第6页浏览型号IR2130JTRPBF的Datasheet PDF文件第7页 
Data Sheet No. PD60019 Rev.P  
IR2130/IR2132(J)(S)&(PbF)  
3-PHASE BRIDGE DRIVER  
Product Summary  
Features  
Floating channel designed for bootstrap operation  
V
600V max.  
200 mA / 420 mA  
10 - 20V  
OFFSET  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
I +/-  
O
Gate drive supply range from 10 to 20V  
Undervoltage lockout for all channels  
Over-current shutdown turns off all six drivers  
Independent half-bridge drivers  
Matched propagation delay for all channels  
2.5V logic compatible  
V
OUT  
t
(typ.)  
675 & 425 ns  
on/off  
Deadtime (typ.) 2.5 µs (IR2130)  
0.8 µs (IR2132)  
Outputs out of phase with inputs  
Cross-conduction prevention logic  
Also available LEAD-FREE  
Packages  
Description  
The IR2130/IR2132(J)(S) is a high voltage, high speed  
power MOSFET and IGBT driver with three indepen-  
dent high and low side referenced output channels. Pro-  
prietary HVIC technology enables ruggedized  
monolithic construction. Logic inputs are compatible with  
CMOS or LSTTL outputs, down to 2.5V logic. A  
ground-referenced operational amplifier provides  
analog feedback of bridge current via an external cur-  
rent sense resistor. A current trip function which termi-  
nates all six outputs is also derived from this resistor.  
An open drain FAULT signal indicates if an over-cur-  
28-Lead SOIC  
28-Lead PDIP  
44-Lead PLCC w/o 12 Leads  
rent or undervoltage shutdown has occurred. The output drivers feature a high pulse current buffer stage designed  
for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The  
floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration  
which operate up to 600 volts.  
Typical Connection  
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer  
to our Application Notes and DesignTips for proper circuit board layout.  
www.irf.com  
1

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