5秒后页面跳转
IR2118SPBF PDF预览

IR2118SPBF

更新时间: 2024-02-23 02:59:08
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
18页 154K
描述
SINGLE CHANNEL DRIVER

IR2118SPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:MS-012AA, SOIC-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:3.21
高边驱动器:YES接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:2
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
标称输出峰值电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:15 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:MOSFET Drivers最大供电电压:20 V
最小供电电压:10 V标称供电电压:15 V
电源电压1-最大:620 V电源电压1-分钟:5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
断开时间:0.18 µs接通时间:0.2 µs
宽度:3.9 mmBase Number Matches:1

IR2118SPBF 数据手册

 浏览型号IR2118SPBF的Datasheet PDF文件第2页浏览型号IR2118SPBF的Datasheet PDF文件第3页浏览型号IR2118SPBF的Datasheet PDF文件第4页浏览型号IR2118SPBF的Datasheet PDF文件第5页浏览型号IR2118SPBF的Datasheet PDF文件第6页浏览型号IR2118SPBF的Datasheet PDF文件第7页 
Data Sheet No. PD60146 Rev N  
IR2117(S)/IR2118(S)&(PbF)  
SINGLE CHANNEL DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
V
600V max.  
200 mA / 420 mA  
10 - 20V  
OFFSET  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
I +/-  
O
Gate drive supply range from 10 to 20V  
Undervoltage lockout  
CMOS Schmitt-triggered inputs with pull-down  
V
OUT  
Output in phase with input (IR2117) or out of  
t
(typ.)  
125 & 105 ns  
on/off  
phase with input (IR2118)  
Also available LEAD-FREE  
Packages  
Description  
The IR2117/IR2118(S) is a high voltage, high speed  
power MOSFET and IGBT driver. Proprietary HVIC and  
latch immune CMOS technologies enable ruggedized  
monolithic construction. The logic input is compatible  
with standard CMOS outputs. The output driver fea-  
tures a high pulse current buffer stage designed for  
minimum cross-conduction. The floating channel can  
be used to drive an N-channel power MOSFET or IGBT  
in the high or low side configuration which operates up  
to 600 volts.  
8-Lead PDIP  
IR2117/IR2118  
8-Lead SOIC  
IR2117S/IR2118S  
Typical Connection  
up to 600V  
VCC  
IN  
VCC  
IN  
VB  
HO  
VS  
TO  
LOAD  
COM  
IR2117  
up to 600V  
VCC  
IN  
VCC  
IN  
VB  
HO  
TO  
LOAD  
COM  
VS  
IR2118  
(Refer to Lead Assignments for correct pin configuration).  
This/These diagram(s) show electrical connections only.  
Please refer to our Application Notes and DesignTips for  
proper circuit board layout.  
www.irf.com  
1

与IR2118SPBF相关器件

型号 品牌 描述 获取价格 数据表
IR2118STR INFINEON Buffer/Inverter Based MOSFET Driver, 0.5A, CMOS, PDSO8, MS-012AA, SOIC-8

获取价格

IR2118STRPBF INFINEON Buffer/Inverter Based MOSFET Driver, 0.5A, CMOS, PDSO8, MS-012AA, SOIC-8

获取价格

IR-2120UH+-1%B08 VISHAY General Purpose Inductor, 120uH, 1%, Ferrite-Core,

获取价格

IR-2120UH+-5%EBE2 VISHAY General Purpose Inductor, 120uH, 5%, Ferrite-Core,

获取价格

IR2121 INFINEON CURRENT LIMITING LOW SIDE DRIVER

获取价格

IR2121PBF INFINEON CURRENT LIMITING LOW SIDE DRIVER

获取价格