5秒后页面跳转
IR2113STR PDF预览

IR2113STR

更新时间: 2024-02-20 08:32:51
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
18页 334K
描述
HIGH AND LOW SIDE DRIVER

IR2113STR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:MS-013AA, SOIC-16针数:16
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:3.11
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G16JESD-609代码:e3
长度:10.3 mm湿度敏感等级:1
功能数量:1端子数量:16
最高工作温度:125 °C最低工作温度:-40 °C
标称输出峰值电流:2.5 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP16,.4
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:15 V
认证状态:Not Qualified座面最大高度:2.65 mm
子类别:MOSFET Drivers最大供电电压:20 V
最小供电电压:3.3 V标称供电电压:15 V
电源电压1-最大:620 V电源电压1-分钟:6 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
断开时间:0.125 µs接通时间:0.15 µs
宽度:7.5 mmBase Number Matches:1

IR2113STR 数据手册

 浏览型号IR2113STR的Datasheet PDF文件第2页浏览型号IR2113STR的Datasheet PDF文件第3页浏览型号IR2113STR的Datasheet PDF文件第4页浏览型号IR2113STR的Datasheet PDF文件第5页浏览型号IR2113STR的Datasheet PDF文件第6页浏览型号IR2113STR的Datasheet PDF文件第7页 
Data Sheet No. PD60147 rev.  
U
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF  
HIGH AND LOW SIDE DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
Fully operational to +500V or +600V  
Tolerant to negative transient voltage  
dV/dt immune  
V
(IR2110) 500V max.  
OFFSET  
(IR2113) 600V max.  
I +/-  
O
2A / 2A  
10 - 20V  
Gate drive supply range from 10 to 20V  
Undervoltage lockout for both channels  
3.3V logic compatible  
V
OUT  
Separate logic supply range from 3.3V to 20V  
t
(typ.)  
120 & 94 ns  
on/off  
Logic and power ground 5V offset  
CMOS Schmitt-triggered inputs with pull-down  
Cycle by cycle edge-triggered shutdown logic  
Matched propagation delay for both channels  
Outputs in phase with inputs  
Delay Matching (IR2110) 10 ns max.  
(IR2113) 20ns max.  
Packages  
Description  
The IR2110/IR2113 are high voltage, high speed power MOSFET and  
IGBT drivers with independent high and low side referenced output chan-  
nels. Proprietary HVIC and latch immune CMOS technologies enable  
ruggedized monolithic construction. Logic inputs are compatible with  
standard CMOS or LSTTL output, down to 3.3V logic. The output  
drivers feature a high pulse current buffer stage designed for minimum  
16-Lead SOIC  
IR2110S/IR2113S  
14-Lead PDIP  
IR2110/IR2113  
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The  
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which  
operates up to 500 or 600 volts.  
Typical Connection  
ꢃꢄꢅꢆꢇꢅꢈꢉꢉꢊꢅꢇꢋꢅꢌꢉꢉꢊ  
ꢀꢎ  
ꢑꢑ  
ꢑꢑ  
ꢀꢁꢂ  
ꢓꢑ  
ꢀꢁꢂ  
ꢓꢑ  
ꢍꢎ  
ꢏꢎꢐꢑ  
ꢏꢁꢂ  
ꢔꢔ  
ꢏꢁꢂ  
ꢔꢎꢕ  
ꢓꢓ  
ꢓꢓ  
ꢏꢎ  
ꢔꢔ  
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical  
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.  
www.irf.com  
1

与IR2113STR相关器件

型号 品牌 描述 获取价格 数据表
IR2113STRPBF INFINEON Half Bridge Based MOSFET Driver, 2.5A, CMOS, PDSO16, MS-013AA, SOIC-16

获取价格

IR21141SS INFINEON HALF-BRIDGE GATE DRIVER IC

获取价格

IR21141SSPBF INFINEON HALF-BRIDGE GATE DRIVER IC

获取价格

IR21141SSPBF_09 INFINEON HALF-BRIDGE GATE DRIVER IC

获取价格

IR21141SSTRPBF INFINEON Half Bridge Based Peripheral Driver, PDSO24, LEAD FREE, MO-150AH, SSOP-24

获取价格

IR2114SS INFINEON HALF-BRIDGE GATE DRIVER IC

获取价格