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IR2113E6PBF PDF预览

IR2113E6PBF

更新时间： 2024-02-26 21:30:32
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器接口集成电路
页数 文件大小 规格书
14页 128K
描述
Half Bridge Based MOSFET Driver, 2A, CMOS, CQCC16, LCC-18

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IR2113E6PBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：LCC
包装说明：QCCN,针数：18
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.82
高边驱动器：YES接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：R-CQCC-N16长度：8.955 mm
功能数量：1端子数量：16
标称输出峰值电流：2 A封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：QCCN封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：260
认证状态：Not Qualified筛选级别：MIL-STD-883 Class B
座面最大高度：3.22 mm最大供电电压：20 V
最小供电电压：5 V标称供电电压：15 V
电源电压1-最大：420 V电源电压1-分钟：6 V
电源电压1-Nom：15 V表面贴装：YES
技术：CMOS端子形式：NO LEAD
端子节距：1.27 mm端子位置：QUAD
处于峰值回流温度下的最长时间：40断开时间：220 µs
接通时间：260 µs宽度：7.305 mm

IR2113E6PBF 数据手册

 浏览型号IR2113E6PBF的Datasheet PDF文件第2页浏览型号IR2113E6PBF的Datasheet PDF文件第3页浏览型号IR2113E6PBF的Datasheet PDF文件第4页浏览型号IR2113E6PBF的Datasheet PDF文件第5页浏览型号IR2113E6PBF的Datasheet PDF文件第6页浏览型号IR2113E6PBF的Datasheet PDF文件第7页 
PD - 91882  
IR2113E6  
HIGH AND LOW SIDE DRIVER  
Product Summary  
Features  
n Floating channel designed for bootstrap operation  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
V
600V max.  
2A / 2A  
OFFSET  
I +/-  
O
n Gate drive supply range from 10 to 20V  
n Undervoltage lockout for both channels  
n Separate logic supply range from 5 to 20V  
Logic and power ground ±5V offset  
n CMOS Schmitt-triggered inputs with pull-down  
n Cycle by cycle edge-triggered shutdown logic  
n Matched propagation delay for both channels  
n Outputs in phase with inputs  
V
10 - 20V  
120 & 94 ns  
10 ns  
OUT  
t
(typ.)  
on/off  
Delay Matching  
Description  
The IR2113E6 is a high voltage, high speed power MOSFET  
and IGBT driver with independent high and low side refer-  
enced output channels. Proprietary HVIC and latch immune  
CMOS technologies enable ruggedized monolithic construc-  
tion. Logic inputs are compatible with standard CMOS or  
LSTTL outputs. The output drivers feature a high pulse  
current buffer stage designed for minimum driver cross-con-  
duction. Propagation delays are matched to simplify use in  
high frequency applications. The floating channel can be  
used to drive an N-channel power MOSFET or IGBT in the  
high side configuration which operates up to 600 volts.  
Absolute Maximum Ratings  
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All  
voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissi-  
pation ratings are measured under board mounted and still air conditions. Additional information is shown  
in Figures 28 through 35.  
Symbol  
Parameter  
Min.  
Max.  
V + 20  
S
600  
Units  
V
V
High Side Floating Supply Absolute Voltage  
High Side Floating Supply Offset Voltage  
High Side Output Voltage  
-0.5  
—
B
S
V
HO  
V
-0.5  
V
B
+ 0.5  
20  
S
V
V
Low Side Fixed Supply Voltage  
Low Side Output Voltage  
-0.5  
CC  
V
LO  
-0.5  
-0.5  
V
+ 0.5  
CC  
V
DD  
Logic Supply Voltage  
V
V
V
+ 20  
+ 0.5  
+ 0.5  
SS  
V
SS  
Logic Supply Offset Voltage  
Logic Input Voltage (HIN, LIN & SD)  
Allowable Offset Supply Voltage Transient (Fig. 16)  
V
V
- 20  
- 0.5  
CC  
SS  
CC  
DD  
V
IN  
dV /dt  
S
P
D
—
50  
V/ns  
W
Package Power Dissipation @ T ≤ = 25°C (Fig. 19)  
—
—
1.6  
125  
125  
150  
A
R
thJA  
Thermal Resistance, Junction to Ambient  
Junction Temperature  
°C/W  
T
-55  
-55  
j
°C  
g
T
S
T
L
Storage Temperature  
Package Mounting Surface Temperature  
Weight  
300 (for 5 seconds)  
0.45 (typical)  
www.irf.com  
1
4/13/99  
1234567...14

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