5秒后页面跳转
IR2113 PDF预览

IR2113

更新时间: 2024-01-12 20:43:45
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器
页数 文件大小 规格书
14页 402K
描述
HIGH AND LOW SIDE DRIVER

IR2113 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:MS-013AA, SOIC-16针数:16
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:3.11
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G16JESD-609代码:e3
长度:10.3 mm湿度敏感等级:1
功能数量:1端子数量:16
最高工作温度:125 °C最低工作温度:-40 °C
标称输出峰值电流:2.5 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP16,.4
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:15 V
认证状态:Not Qualified座面最大高度:2.65 mm
子类别:MOSFET Drivers最大供电电压:20 V
最小供电电压:3.3 V标称供电电压:15 V
电源电压1-最大:620 V电源电压1-分钟:6 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
断开时间:0.125 µs接通时间:0.15 µs
宽度:7.5 mmBase Number Matches:1

IR2113 数据手册

 浏览型号IR2113的Datasheet PDF文件第2页浏览型号IR2113的Datasheet PDF文件第3页浏览型号IR2113的Datasheet PDF文件第4页浏览型号IR2113的Datasheet PDF文件第5页浏览型号IR2113的Datasheet PDF文件第6页浏览型号IR2113的Datasheet PDF文件第7页 
Previous Datasheet  
Index  
Next Data Sheet  
Data Sheet No. PD-6.030C  
IR2113  
HIGH AND LOW SIDE DRIVER  
Features  
Product Summary  
n Floating channel designed for bootstrap operation  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
V
600V max.  
2A / 2A  
OFFSET  
I +/-  
O
n Gate drive supply range from 10 to 20V  
n Undervoltage lockout for both channels  
n Separate logic supply range from 5 to 20V  
Logic and power ground ±5V offset  
n CMOS Schmitt-triggered inputs with pull-down  
n Cycle by cycle edge-triggered shutdown logic  
n Matched propagation delay for both channels  
V
10 - 20V  
OUT  
t
(typ.)  
120 & 94 ns  
10 ns  
on/off  
Delay Matching  
Packages  
n Outputs in phase with inputs  
Description  
The IR2113 is a high voltage, high speed power  
MOSFET and IGBT driver with independent high and  
low side referenced output channels. Proprietary  
HVIC and latch immune CMOS technologies enable  
ruggedized monolithic construction. Logic inputs are  
compatible with standard CMOS or LSTTL outputs.  
The output drivers feature a high pulse current buffer  
stage designed for minimum driver cross-conduc-  
tion. Propagation delays are matched to simplify  
use in high frequency applications. The floating  
channel can be used to drive an N-channel power  
MOSFET or IGBT in the high side configuration  
which operates up to 600 volts.  
Typical Connection  
up to 600V  
HO  
VDD  
HIN  
SD  
VB  
VS  
VDD  
HIN  
SD  
TO  
LOAD  
LIN  
VSS  
VCC  
COM  
LO  
LIN  
VSS  
VCC  
CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL B-61  
To Order  
 
 

与IR2113相关器件

型号 品牌 描述 获取价格 数据表
IR2113-1 INFINEON Half Bridge Based MOSFET Driver, 2.5A, CMOS, PDIP13, PLASTIC, DIP-14/13

获取价格

IR2113-1PBF INFINEON HIGH AND LOW SIDE DRIVER

获取价格

IR2113-2 ETC MOSFET Driver

获取价格

IR2113-2PBF INFINEON HIGH AND LOW SIDE DRIVER

获取价格

IR2113E6 INFINEON HIGH AND LOW SIDE DRIVER

获取价格

IR2113E6PBF INFINEON Half Bridge Based MOSFET Driver, 2A, CMOS, CQCC16, LCC-18

获取价格