5秒后页面跳转
IR2110L4SCS PDF预览

IR2110L4SCS

更新时间: 2024-02-12 20:34:56
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口接口集成电路
页数 文件大小 规格书
14页 253K
描述
HIGH AND LOW SIDE DRIVER

IR2110L4SCS 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:DIP
包装说明:MO-036AB, 14 PIN针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.46
Is Samacsys:N高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-CDIP-T14
JESD-609代码:e0长度:19 mm
功能数量:1端子数量:14
标称输出峰值电流:2 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified筛选级别:MIL-STD-883 Class S
座面最大高度:4.44 mm最大供电电压:20 V
最小供电电压:5 V标称供电电压:15 V
电源电压1-最大:420 V电源电压1-分钟:6 V
电源电压1-Nom:15 V表面贴装:NO
技术:CMOS端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:220 µs接通时间:260 µs
宽度:7.62 mmBase Number Matches:1

IR2110L4SCS 数据手册

 浏览型号IR2110L4SCS的Datasheet PDF文件第2页浏览型号IR2110L4SCS的Datasheet PDF文件第3页浏览型号IR2110L4SCS的Datasheet PDF文件第4页浏览型号IR2110L4SCS的Datasheet PDF文件第5页浏览型号IR2110L4SCS的Datasheet PDF文件第6页浏览型号IR2110L4SCS的Datasheet PDF文件第7页 
PD-60085B  
IR2110L4  
HIGH AND LOW SIDE DRIVER  
Product Summary  
Features  
n Floating channel designed for bootstrap operation  
Fully operational to +400V  
Tolerant to negative transient voltage  
dV/dt immune  
n Gate drive supply range from 10 to 20V  
n Undervoltage lockout for both channels  
n Separate logic supply range from 5 to 20V  
Logic and power ground ±5V offset  
n CMOS Schmitt-triggered inputs with pull-down  
n Cycle by cycle edge-triggered shutdown logic  
n Matched propagation delay for both channels  
n Outputs in phase with inputs  
V
400V max.  
2A / 2A  
OFFSET  
I +/-  
O
V
10 - 20V  
120ns & 94ns  
10ns  
OUT  
(typ.)  
t
on/off  
Delay Matching  
Description  
high pulse current buffer stage designed for minimum  
driver cross-conduction. Propagation delays are matched  
to simplify use in high frequency applications. The floating  
channel can be used to drive an N-channel power MOSFET  
or IGBT in the high side configuration which operates up  
to 400 volts.  
The IR2110L4 is a high voltage, high speed power MOSFET  
and IGBT driver with independent high and low side  
referenced output channels. Proprietary HVIC and latch  
immune CMOS technologies enable ruggedized monolithic  
construction. Logic inputs are compatible with standard  
CMOS or LSTTL outputs. The output drivers fetures a  
Absolute Maximum Ratings  
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.All voltageparametersare  
absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board  
mountedandstillairconditions.  
Symbol  
Parameter  
High Side Floating Supply Voltage  
High Side Floating Supply Offset Voltage  
High Side Floating Output Voltage  
Low Side Fixed Supply Voltage  
Low Side Output Voltage  
Min.  
-0.5  
—
Max.  
Units  
V
V
V + 20  
S
B
S
400  
V + 0.5  
B
V
V
V
- 0.5  
HO  
CC  
S
-0.5  
-0.5  
-0.5  
20  
+ 0.5  
V
LO  
V
DD  
V
SS  
V
V
CC  
Logic Supply Voltage  
V
+ 20  
+ 0.5  
+ 0.5  
SS  
Logic Supply Offset Voltage  
V
- 20  
V
V
CC  
SS  
CC  
DD  
V
Logic Input Voltage (HIN, LIN & SD)  
Allowable Offset Supply Voltage Transient (Figure 2)  
V
- 0.5  
IN  
dV /dt  
—
50  
V/ns  
W
s
P
D
Package Power Dissipation @ T £ +25°C  
—
—
1.6  
75  
A
R
thJA  
Thermal Resistance, Junction to Ambient  
Junction Temperature  
°C/W  
T
J
-55  
-55  
—
125  
150  
300  
T
S
Storage Temperature  
°C  
g
T
L
Lead Temperature (Soldering, 10 seconds)  
Weight  
1.5 (typical)  
www.irf.com  
1
05/02/11  

与IR2110L4SCS相关器件

型号 品牌 描述 获取价格 数据表
IR2110L6 INFINEON HIGH AND LOW SIDE DRIVER

获取价格

IR2110LPBF INFINEON Half Bridge Based MOSFET Driver, 2A, PDIP14, MO-036AB, 14 PIN

获取价格

IR2110PBF INFINEON HIGH AND LOW SIDE DRIVER

获取价格

IR2110S INFINEON HIGH AND LOW SIDE DRIVER

获取价格

IR2110SPBF INFINEON HIGH AND LOW SIDE DRIVER

获取价格

IR2110STR INFINEON HIGH AND LOW SIDE DRIVER

获取价格