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IR2110-1PBF PDF预览

IR2110-1PBF

更新时间: 2024-01-28 00:15:33
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器
页数 文件大小 规格书
18页 328K
描述
HIGH AND LOW SIDE DRIVER

IR2110-1PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIP包装说明:LEAD FREE, PLASTIC, MS-001AC, DIP-14/13
针数:14/13Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.6高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-PDIP-T13
JESD-609代码:e3长度:19.305 mm
功能数量:1端子数量:13
最高工作温度:125 °C最低工作温度:-40 °C
标称输出峰值电流:2.5 A封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP14,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):250电源:15 V
认证状态:Not Qualified座面最大高度:5.33 mm
子类别:MOSFET Drivers最大供电电压:20 V
最小供电电压:3.3 V标称供电电压:15 V
电源电压1-最大:520 V电源电压1-分钟:6 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
断开时间:0.125 µs接通时间:0.15 µs
宽度:7.62 mmBase Number Matches:1

IR2110-1PBF 数据手册

 浏览型号IR2110-1PBF的Datasheet PDF文件第2页浏览型号IR2110-1PBF的Datasheet PDF文件第3页浏览型号IR2110-1PBF的Datasheet PDF文件第4页浏览型号IR2110-1PBF的Datasheet PDF文件第5页浏览型号IR2110-1PBF的Datasheet PDF文件第6页浏览型号IR2110-1PBF的Datasheet PDF文件第7页 
Data Sheet No. PD60147 rev.  
U
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF  
HIGH AND LOW SIDE DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
Fully operational to +500V or +600V  
Tolerant to negative transient voltage  
dV/dt immune  
V
(IR2110) 500V max.  
OFFSET  
(IR2113) 600V max.  
I +/-  
O
2A / 2A  
10 - 20V  
Gate drive supply range from 10 to 20V  
Undervoltage lockout for both channels  
3.3V logic compatible  
V
OUT  
Separate logic supply range from 3.3V to 20V  
t
(typ.)  
120 & 94 ns  
on/off  
Logic and power ground 5V offset  
CMOS Schmitt-triggered inputs with pull-down  
Cycle by cycle edge-triggered shutdown logic  
Matched propagation delay for both channels  
Outputs in phase with inputs  
Delay Matching (IR2110) 10 ns max.  
(IR2113) 20ns max.  
Packages  
Description  
The IR2110/IR2113 are high voltage, high speed power MOSFET and  
IGBT drivers with independent high and low side referenced output chan-  
nels. Proprietary HVIC and latch immune CMOS technologies enable  
ruggedized monolithic construction. Logic inputs are compatible with  
standard CMOS or LSTTL output, down to 3.3V logic. The output  
drivers feature a high pulse current buffer stage designed for minimum  
16-Lead SOIC  
IR2110S/IR2113S  
14-Lead PDIP  
IR2110/IR2113  
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The  
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which  
operates up to 500 or 600 volts.  
Typical Connection  
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(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical  
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.  
www.irf.com  
1

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