5秒后页面跳转
IR2109 PDF预览

IR2109

更新时间: 2024-01-07 01:28:44
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
9页 174K
描述
HALF-BRIDGE DRIVER

IR2109 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:3.18
Is Samacsys:N其他特性:FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:2
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
标称输出峰值电流:0.35 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.75 mm
最大供电电压:20 V最小供电电压:10 V
标称供电电压:15 V电源电压1-最大:620 V
电源电压1-分钟:5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30断开时间:0.28 µs
接通时间:0.95 µs宽度:3.9 mm
Base Number Matches:1

IR2109 数据手册

 浏览型号IR2109的Datasheet PDF文件第2页浏览型号IR2109的Datasheet PDF文件第3页浏览型号IR2109的Datasheet PDF文件第4页浏览型号IR2109的Datasheet PDF文件第5页浏览型号IR2109的Datasheet PDF文件第6页浏览型号IR2109的Datasheet PDF文件第7页 
Data Sheet No. PD60163-P  
( )  
S
IR2109(4)  
HALF-BRIDGE DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
V
600V max.  
OFFSET  
I +/-  
120 mA / 250 mA  
10 - 20V  
Gate drive supply range from 10 to 20V  
Undervoltage lockout for both channels  
3.3V, 5V and 15V input logic compatible  
Cross-conduction prevention logic  
Matched propagation delay for both channels  
High side output in phase with IN input  
Logic and power ground +/- 5V offset.  
Internal 540ns dead-time, and programmable  
O
V
OUT  
t
(typ.)  
750 & 200 ns  
540 ns  
on/off  
Dead Time  
(programmable up to 5uS for IR21094)  
up to 5us with one external R resistor (IR21094)  
DT  
Packages  
Lower di/dt gate driver for better noise immunity  
Shut down input turns off both channels.  
Description  
14 Lead SOIC  
14 Lead PDIP  
The IR2109(4)(S) are high voltage, high speed power  
MOSFET and IGBT drivers with dependent high and  
low side referenced output channels.Proprietary HVIC  
and latch immune CMOS technologies enable rugge-  
dized monolithic construction. The logic input is  
compatible with standard CMOS or LSTTL output,  
down to 3.3V logic. The output drivers feature a high  
pulse current buffer stage designed for minimum driver  
8 Lead SOIC  
8 Lead PDIP  
cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the  
high side configuration which operates up to 600 volts.  
Typical Connection  
up to 600V  
VCC  
VCC  
IN  
VB  
HO  
VS  
IN  
TO  
LOAD  
SD  
SD  
up to 600V  
COM  
LO  
IR21094  
HO  
VB  
VS  
IR2109  
VCC  
IN  
VCC  
IN  
TO  
LOAD  
SD  
DT  
VSS  
SD  
(Refer to Lead Assignments for correct  
configuration).This/These diagram(s) show  
electrical connections only. Please refer to our  
Application Notes and DesignTips for proper  
circuit board layout.  
COM  
LO  
VSS  
RDT  
www.irf.com  
1

与IR2109相关器件

型号 品牌 描述 获取价格 数据表
IR21091 INFINEON HALF-BRIDGE DRIVER

获取价格

IR21091PBF INFINEON HALF-BRIDGE DRIVER

获取价格

IR21091PBF VISHAY IC 0.35 A HALF BRDG BASED MOSFET DRIVER, PDIP8, LEAD FREE, PLASTIC, MS-001AB, DIP-8, MOSFE

获取价格

IR21091S INFINEON HALF-BRIDGE DRIVER

获取价格

IR21091S VISHAY IC 0.35 A HALF BRDG BASED MOSFET DRIVER, PDSO8, MS-012AA, SOIC-8, MOSFET Driver

获取价格

IR21091SPBF INFINEON HALF-BRIDGE DRIVER

获取价格