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IR2108S PDF预览

IR2108S

更新时间: 2024-01-06 03:55:58
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
23页 322K
描述
HALF-BRIDGE DRIVER

IR2108S 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:MS-012AA, SOIC-8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:1.66其他特性:FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:2
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
标称输出峰值电流:0.35 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.75 mm
最大供电电压:20 V最小供电电压:10 V
标称供电电压:15 V电源电压1-最大:620 V
电源电压1-分钟:5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:0.28 µs
接通时间:0.3 µs宽度:3.9 mm
Base Number Matches:1

IR2108S 数据手册

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Data Sheet No. PD60161-R  
( ) & (PbF)  
( ) S  
IR2108 4  
Features  
HALF-BRIDGE DRIVER  
Packages  
Floating channel designed for bootstrap operation  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
14-Lead SOI
IR21084S  
8-Lead SOIC  
IR2108S  
Gate drive supply range from 10 to 20V  
Undervoltage lockout for both channels  
3.3V, 5V and 15V input logic compatible  
Cross-conduction prevention logic  
Matched propagation delay for both channels  
High side output in phase with HIN input  
Low side output out of phase with  
Logic and power ground +/- 5V offset.  
14-Lead PDIP  
IR21084  
8-Lead PDIP  
IR2108  
input  
LIN  
Internal 540ns dead-time, and  
programmable up to 5us with one  
2106/2301//2108//2109/2302/2304 Feature Comparison  
external R  
Lower di/dt gate driver for better  
noise immunity  
Available in Lead-Free  
resistor (IR21084)  
DT  
Cross-  
Input  
logic  
conduction  
prevention  
logic  
Part  
Dead-Time  
Ground Pins  
2106/2301  
21064  
2108  
21084  
2109/2302  
21094  
COM  
VSS/COM  
COM  
VSS/COM  
COM  
HIN/LIN  
HIN/LIN  
no  
none  
Internal 540ns  
Programmable 0.54~5 µs  
Internal 540ns  
Description  
yes  
The IR2108(4)(S) are high voltage, high speed  
power MOSFET and IGBT drivers with depen-  
dent high and low side referenced output  
channels. Proprietary HVIC and latch immune  
IN/SD  
yes  
yes  
Programmable 0.54~5 µs  
VSS/COM  
HIN/LIN  
Internal 100ns  
2304  
COM  
CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS  
or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for  
minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or  
IGBT in the high side configuration which operates up to 600 volts.  
Typical Connection  
up to 600V  
VCC  
VCC  
VB  
HO  
VS  
HIN  
LIN  
HIN  
LIN  
TO  
LOAD  
COM  
LO  
up to 600V  
IR21084  
HO  
VB  
IR2108  
VCC  
HIN  
LIN  
DT  
VCC  
HIN  
LIN  
VS  
TO  
LOAD  
(Refer to Lead Assignments for correct pin  
configuration). This/These diagram(s) show  
electrical connections only. Please refer to our  
Application Notes and DesignTips for proper  
circuit board layout.  
VSS  
COM  
LO  
VSS  
RDT  
www.irf.com  
1

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