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IR2106SPBF PDF预览

IR2106SPBF

更新时间: 2024-01-26 00:21:34
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管PC
页数 文件大小 规格书
22页 314K
描述
HIGH AND LOW SIDE DRIVER

IR2106SPBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SOIC
包装说明:MS-012AA, SOIC-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:3.14
Is Samacsys:N其他特性:FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:1
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
标称输出峰值电流:0.35 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:15 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:MOSFET Drivers最大供电电压:20 V
最小供电电压:10 V标称供电电压:15 V
电源电压1-最大:620 V电源电压1-分钟:5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
断开时间:0.28 µs接通时间:0.3 µs
宽度:3.9 mmBase Number Matches:1

IR2106SPBF 数据手册

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Data Sheet No. PD60162 Rev. V  
( )  
S
IR2106(4)  
HIGH AND LOW SIDE DRIVER  
Features  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
Packages  
Floating channel designed for bootstrap operation  
Gate drive supply range from 10 to 20V (IR2106(4))  
Undervoltage lockout for both channels  
3.3V, 5V and 15V input logic compatible  
Matched propagation delay for both channels  
Logic and power ground +/- 5V offset.  
Lower di/dt gate driver for better noise immunity  
Outputs in phase with inputs (IR2106)  
8-Lead SOIC  
8-Lead PDIP  
14-Lead SOIC  
14-Lead PDIP  
Description  
2106/2301//2108//2109/2302/2304Feature Comparison  
The IR2106(4)(S) are high voltage,  
high speed power MOSFET and  
IGBT drivers with independent high  
and low side referenced output chan-  
nels. Proprietary HVIC and latch  
immune CMOS technologies enable  
ruggedized monolithic construction.  
The logic input is compatible with  
standard CMOS or LSTTL output,  
down to 3.3V logic. The output driv-  
Cross-  
Input  
logic  
conduction  
prevention  
logic  
Part  
Dead-Time  
Ground Pins  
Ton/Toff  
2106/2301  
21064  
2108  
21084  
2109/2302  
21094  
COM  
VSS/COM  
COM  
VSS/COM  
COM  
HIN/LIN  
HIN/LIN  
no  
none  
220/200  
220/200  
Internal 540ns  
Programmable 0.54~5µs  
Internal 540ns  
yes  
IN/SD  
yes  
yes  
750/200  
160/140  
Programmable 0.54~5µs  
VSS/COM  
HIN/LIN  
Internal 100ns  
2304  
COM  
ers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating  
channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which  
operates up to 600 volts.  
Typical Connection  
up to 600V  
VCC  
VCC  
HIN  
LIN  
VB  
HO  
VS  
HIN  
LIN  
TO  
LOAD  
COM  
LO  
IR2106  
up to 600V  
HO  
VB  
VS  
VCC  
HIN  
VCC  
HIN  
LIN  
TO  
LOAD  
LIN  
(Refer to Lead Assignments for cor-  
rect pin configuration). This/These  
diagram(s) show electrical connec-  
tions only. Please refer to our Appli-  
cation Notes and DesignTips for  
proper circuit board layout.  
IR21064  
VSS  
COM  
LO  
VSS  
www.irf.com  
1

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