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IR2104PBF PDF预览

IR2104PBF

更新时间: 2024-02-28 10:37:45
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管PC
页数 文件大小 规格书
14页 137K
描述
HALF-BRIDGE DRIVER

IR2104PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:MS-012AA, SOIC-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:3.14
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/3667347.1.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=3667347
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=36673473D View:https://componentsearchengine.com/viewer/3D.php?partID=3667347
Samacsys PartID:3667347Samacsys Image:https://componentsearchengine.com/Images/9/IR2104STRPBF.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/IR2104STRPBF.jpgSamacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:8 SOICSamacsys Released Date:2020-03-10 13:36:54
Is Samacsys:N高边驱动器:YES
输入特性:SCHMITT TRIGGER接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:1
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:TOTEM-POLE标称输出峰值电流:0.36 A
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:15 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:MOSFET Drivers最大供电电压:20 V
最小供电电压:10 V标称供电电压:15 V
电源电压1-最大:620 V电源电压1-分钟:5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
断开时间:0.22 µs接通时间:0.82 µs
宽度:3.9 mmBase Number Matches:1

IR2104PBF 数据手册

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Data Sheet No. PD60046-S  
( )&(PbF)  
S
IR2104  
HALF-BRIDGE DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
V
600V max.  
130 mA / 270 mA  
10 - 20V  
OFFSET  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
Gate drive supply range from 10 to 20V  
Undervoltage lockout  
3.3V, 5V and 15V input logic compatible  
Cross-conduction prevention logic  
Internally set deadtime  
High side output in phase with input  
I +/-  
O
V
OUT  
t
(typ.)  
680 & 150 ns  
520 ns  
on/off  
Deadtime (typ.)  
Shut down input turns off both channels  
Matched propagation delay for both channels  
Packages  
Also available LEAD-FREE  
Description  
The IR2104(S) are high voltage, high speed power  
MOSFET and IGBT drivers with dependent high and low  
side referenced output channels. Proprietary HVIC and  
latch immune CMOS technologies enable ruggedized  
8 Lead SOIC  
IR2104S  
8 Lead PDIP  
IR2104  
monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic.  
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The  
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which  
operates from 10 to 600 volts.  
Typical Connection  
up to 600V  
VCC  
VCC  
IN  
VB  
HO  
VS  
IN  
TO  
LOAD  
SD  
SD  
COM  
LO  
(Refer to Lead Assignment for correct pin configuration) This/These diagram(s) show electrical  
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.  
www.irf.com  
1

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