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IR2102S PDF预览

IR2102S

更新时间: 2024-02-29 20:15:44
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
15页 211K
描述
HIGH AND LOW SIDE DRIVER

IR2102S 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SOP, SOP8,.25Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:1高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:2功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C标称输出峰值电流:0.36 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
电源:15 V认证状态:Not Qualified
座面最大高度:1.75 mm子类别:MOSFET Drivers
最大供电电压:20 V最小供电电压:10 V
标称供电电压:15 V电源电压1-最大:620 V
电源电压1-分钟:5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30断开时间:0.22 µs
接通时间:0.22 µs宽度:3.9 mm
Base Number Matches:1

IR2102S 数据手册

 浏览型号IR2102S的Datasheet PDF文件第2页浏览型号IR2102S的Datasheet PDF文件第3页浏览型号IR2102S的Datasheet PDF文件第4页浏览型号IR2102S的Datasheet PDF文件第5页浏览型号IR2102S的Datasheet PDF文件第6页浏览型号IR2102S的Datasheet PDF文件第7页 
Preliminary Data Sheet No. PD60043J  
IR2101/IR21014  
IR2102/IR21024  
HIGH AND LOW SIDE DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
Gate drive supply range from 10 to 20V  
Undervoltage lockout  
V
600V max.  
130 mA / 270 mA  
10 - 20V  
OFFSET  
I +/-  
O
V
OUT  
5V Schmitt-triggered input logic  
Matched propagation delay for both channels  
Outputs in phase with inputs (IR2101/IR21014) or  
out of phase with inputs (IR2102/IR21024)  
t
(typ.)  
160 & 150 ns  
50 ns  
on/off  
Delay Matching  
Packages  
Description  
The IR2101/IR21014/IR2102/IR21024 are high voltage,  
high speed power MOSFET and IGBT drivers with in-  
dependent high and low side referenced output chan-  
nels. Proprietary HVIC and latch immune CMOS tech-  
nologies enable ruggedized monolithic construction.The  
logic input is compatible with standard CMOS or LSTTL  
output. The output drivers feature a high pulse current  
buffer stage designed for minimum driver cross-conduc-  
tion. The floating channel can be used to drive an N-  
channel power MOSFET or IGBT in the high side con-  
figuration which operates up to 600 volts.  
8 Lead SOIC  
14 Lead SOIC  
8 Lead PDIP  
14 Lead PDIP  
Typical Connection  
up to 600V  
VCC  
VCC  
HIN  
LIN  
VB  
HO  
VS  
HIN  
LIN  
TO  
LOAD  
COM  
LO  
IR2101  
up to 600V  
VCC  
VCC  
VB  
HO  
VS  
HIN  
LIN  
HIN  
LIN  
TO  
LOAD  
COM  
LO  
IR2102  

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