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IR1176 PDF预览

IR1176

更新时间: 2024-02-25 13:51:31
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
12页 419K
描述
SYNCHRONOUS RECTIFIER DRIVER

IR1176 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP,
针数:20Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.89Is Samacsys:N
高边驱动器:YES接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G20JESD-609代码:e0
长度:12.8 mm湿度敏感等级:3
功能数量:1端子数量:20
最高工作温度:85 °C最低工作温度:-40 °C
标称输出峰值电流:4 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:2.65 mm
最大供电电压:5.25 V最小供电电压:4 V
标称供电电压:5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.5 mm
Base Number Matches:1

IR1176 数据手册

 浏览型号IR1176的Datasheet PDF文件第2页浏览型号IR1176的Datasheet PDF文件第3页浏览型号IR1176的Datasheet PDF文件第4页浏览型号IR1176的Datasheet PDF文件第5页浏览型号IR1176的Datasheet PDF文件第6页浏览型号IR1176的Datasheet PDF文件第7页 
Preliminary Data Sheet PD60185-C  
IR1176  
SYNCHRONOUS RECTIFIER DRIVER  
Product Summary  
Features  
Provides constant and proper gate drive to power  
MOSFETs regardless of transformer output  
Minimizes loss due to power MOSFET body  
drain diode conduction  
V
dd  
5Vdc  
I
4A/4A  
2MHz  
O+/- (peak)  
Stand alone operation - no ties to primary side  
Schmitt trigger input with double pulse suppress-  
ion allows operation in noisy environments  
High peak current drive capability - 4A  
High speed operation - 2MHz  
F
max  
Max lead time  
500nsec  
Adaptable to multiple topologies  
Description  
Packages  
The IR1176 is a high speed CMOS controller designed  
to drive N-channel power MOSFETs used as synchro-  
nous rectifiers in high current, high frequency forward  
converters with output voltages equal or below 5VDC.  
Schmitt trigger inputs with double pulse suppression  
allow the controller to operate in noisy environments.  
The circuit does not require any ties to the primary  
side and derives its operating power directly from  
the secondary. The circuit functions by anticipating  
transformer output transitions, then turns the power  
MOSFETs on or off before the transitions of the trans-  
former to minimize body drain diode conduction and  
reduce associated losses. Turn on/off lead time can  
be adjusted to accommodate a variety of power  
MOSFET sizes and circuit conditions. The IR1176 also  
provides gate drive overlap/dead-time control via  
external components to further minimize diode con-  
duction by nulling effects of secondary loop and de-  
vice package inductance.  
IR1176S  
20 Lead Surface Mount  
(SSOP-20)  
IR1176SS  
20 Lead SOIC (MS-013AC)  
IR1176  
20 Lead PDIP  
(MS-001AD)  

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